PORTLAND, Ore. — Electronics devices using ferroelectric transistors would turn on instantly without the need to boot from flash or hard-disk memories. Such ferroelectric transistors would likely use ...

As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of industrial Science, The University of Tokyo, has experimentally clarified the operation mechanism of low voltage ...

Researchers have introduced a new FE-FET design that demonstrates record-breaking performances in both computing and memory. The Big Data revolution has strained the capabilities of state-of-the-art ...

Ferroelectric FETs and memories are beginning to show promise as researchers begin developing and testing next-generation transistors. One measure of the efficiency of a transistor is the subthreshold ...

A new technical paper titled “Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor” was published by researchers at Lund University in Sweden. “Reconfigurable transistors ...

A limiting problem in creating energy-efficient circuits for improved memory and more powerful computers is manufacturing a transistor with reconfigurable properties. As the size of transistors ...

WEST LAFAYETTE, Ind. — A computer chip processes and stores information using two different devices. If engineers could combine these devices into one or put them next to each other, then there would ...

Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have ...

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