KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
Over on YouTube [DENKI OTAKU] runs us through how a 4-pin MOSFET works and what the extra Kelvin source pin does. A typical ...
The wide-bandgap double pulse test (WBG-DPT) application from Tektronix automates key validation measurements on wide bandgap devices such as SiC and GaN MOSFETs. Running on the company’s 4/5B/6B ...
Omron has introduced 400V and 600V 110°C versions of its G3VM photo mos isolated electronic relay family, as well as a 40V 2Ω type in the 1.5 x 2.5 x 1.3mm 4pin VSON package. With G3VM-401xY2 and G3VM ...
Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction inverters [2] with an innovative ...
The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized [3] during reverse conduction operation [4]. Toshiba SiC MOSFETs alleviate this ...
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