KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...
Cree Inc., a maker of silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance ...
Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged ...
Infineon has brought out an evaluation kit for double pulse testing of the switching behaviour of powerdrive options for the 1200V CoolSiC MOSFET in TO247 3-pin and 4-pin packages. The motherboard of ...
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction inverters [2] with an innovative ...
Infineon has brought out an evaluation kit for double pulse testing of the switching behaviour of powerdrive options for the 1200V CoolSiC MOSFET in TO247 3-pin and 4-pin packages. The motherboard of ...
The reliability of typical SiC MOSFETs is degraded by increased On-resistance when its body diodes are bipolar energized [3] during reverse conduction operation [4]. Toshiba SiC MOSFETs alleviate this ...
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