Largest gallium wafer at lowest cost: how China leads on next-gen semiconductor tech
A world-first N-polar GaN wafer created by Chinese scientists could be a game changer for the semiconductor industry A breakthrough in next-generation semiconductor technology has been announced by ...
AZoM on MSN3d
Gallium Nitride (GaN) Characterization with Raman and Photoluminescence Techniques
Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...
DIGITIMES4d
China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
Semiconductor Engineering5d
Research Bits: Mar. 25
D materials in 3D transistors; electrochemical memristive mechanism; matching substrates for power electronics.