News

EDN1d
Isolated driver enables fast, stable GaN control
Rohm has introduced the BM6GD11BFJ-LB, an isolated gate driver optimized for 600-V-class GaN HEMTs in industrial equipment ...
IEEE2d
DLS -GAN: Generative Adversarial Nets for Defect Location Sensitive Data Augmentation - IEEE Xplore
Limited data usually cause deep neural networks to hold poor performance after training, and many generative models are proposed to synthesize data to improve the performance of models. However, ...
IEEE4d
A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs - IEEE Xplore
Gallium-nitride power transistor (GaN HEMT) and integrated circuit technologies have matured dramatically over the last few years, and many hundreds of thousands of devices have been manufactured and ...
C&EN4d
High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene | ACS Applied Materials & Interfaces - ACS Publications
Two-dimensional (2D) release layers are commonly used to realize flexible nitride films. Here, high-quality, large-area, and transferable nitride films can be precisely controlled grown on ...