Electronics Weekly2d
Driving a GaN half-bridge? You might want to know this
A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data ...
powerelectronicsworld16d
GaN adoption at tipping point, says Infineon
Company's 2025 predictions say GaN is becoming a game-changer across multiple industries In its 2025 predictions, Infineon says GaN will be a game-changing material across consumer, mobility, ...
powerelectronicsnews19d
First AlN MOSFET Showcases Promises and Challenges
In this article, we summarize a recent initial demonstration of an aluminum nitride (AlN) UWBG-based MOSFET device. Decades of research and development are needed to successfully commercialize a new ...
powerelectronicsworld23d
Turbocharging the GaN MOSFET with a HfO₂ gate
“Vertical gallium nitride is still a relatively immature platform for device development,” says Binder, who points to a very mature, established commercialisation path for SiC MOSFETs. “If we can ...