Abstract: The higher voltage blocking capability and faster switching speed of silicon-carbide (SiC) mosfets have the potential to replace Si insulated gate bipolar transistors (IGBTs) in ...
Abstract: We report on gate-all-around (GAA) n- and p-MOSFETs made of 8-nm-diameter vertically stacked horizontal Si nanowires (NWs). We show that these devices, which were fabricated on bulk Si ...
Korea’s Sungjae Im, a two-time PGA Tour winner and one of the Tour's ironmen, will not leave for the rival circuit, a source tells Sports Illustrated. Sungjae Im is a two-time PGA Tour winner and has ...
Each week during the high school sports season, High School on SI will gather the best performances across the country with the help of fans, readers and staff. Now, it’s your turn to choose a ...