AZoM on MSN2d
Gallium Nitride (GaN) Characterization with Raman and Photoluminescence Techniques
Use precise geolocation data and actively scan device characteristics for identification. This is done to store and access ...
DIGITIMES3d
China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
Compound Semiconductor Materials Market to Surpass USD 91,034 million by 2035, Driven by 5G and EV Boom | Future Market Insights, Inc.
The Compound Semiconductor Materials Market is on a high-growth trajectory, with projections indicating an increase from USD ...
Overcoming stacking constraints in hexagonal boron nitride via metal-organic chemical vapor deposition
Researchers from Pohang University of Science and Technology (POSTECH) and the University of Montpellier have successfully ...
Business Line16d
Indium eyeing ₹1,300 crore revenue in 2025-26
Indium, the Chennai-based digital engineering firm, plans to cross revenue of ₹1,300 crore in 2025-26, up from ₹130 crore in 2021-22, a 10x growth in the last five years, said the company’s ...
Nature17d
Metals squeezed to thickness of just two atoms
Using their approach, Zhao et al. produced 2D crystals of bismuth, gallium, indium, tin and lead, all with sub-nanometre thicknesses. The size, stability and uniformity of thickness of the ...
C&EN23d
Regulating the Structure and Optical Properties of Graphitic Carbon Nitride by Tuning Edge Aromatic Functional Groups
College of Physics Science and Technology, Kunming University, No. 2 Pu Xin Road, Guandu District, Kunming 650214, Yunnan Province, China ...