Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

On Wednesday, March 19th, Gan Academy invites the Crown Heights community and friends around the world to invest in the ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Sanderson was named the 2025 Tennessee Gatorade Boys Gatorade Player of the Year after leading the Tigers to the Division ...

Chattanooga Prep won its second straight TSSAA boys basketball state tournament title in Class 1A. But the school has deep ...

With the recent announcement by Infineon that GaN use is reaching the “tipping point” for accelerated adoption, maybe it’s ...

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

NEXPERIA e-mode GaN FET portfolio includes 12 new devices intended to address the growing demand for higher efficiency and ...

Mitsubishi Electric Corporation will begin shipping samples of a new 16W-average-power GaN power amplifier module (PAM) for ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...