Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

Minister of State for Education Gan Siow Huang made these points in parliament on Friday (Mar 7) in response to MPs’ questions on the Graduate Employment Survey (GES) and whether there were ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

GaN power devices have gained prominence in medium- and high-power applications due to their ability to operate at high frequencies while maintaining excellent efficiency. Deliver higher efficiency, ...

After hours: March 21 at 6:01:19 PM EDT Loading Chart for GAN ...

After hours: March 21 at 8:00:00 PM EDT Loading Chart for CUBE ...

Pre-Market: 8:14:40 a.m. EDT Loading Chart for GES ...

Specifically, InterFaceGAN is capable of turning an unconditionally trained face synthesis model to controllable GAN by interpreting the very first latent space and finding the hidden semantic ...

Finally, we suggest a new metric for evaluating GAN results, both in terms of image quality and variation. As an additional contribution, we construct a higher-quality version of the CelebA dataset.