Abstract: An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID) effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs).

School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi 214122, China School of Internet of Things Engineering, ...

The Management of the Ghana Education Service (GES) has issued a firm statement to clarify public discussions surrounding the release of the 2025 West African Senior School Certificate Examination ...

Abstract: In recent years, an increasing trend towards GaN integration can be observed, enabled by the lateral structure of the GaN technology. A key improvement over a discrete implementation is the ...