A question arose at Electronics Weekly after Rohm introduced an 8pad isolated for GaN transistors. In the BM6GD11BFJ-LB data ...

In this article, we summarize a recent initial demonstration of an aluminum nitride (AlN) UWBG-based MOSFET device. Decades of research and development are needed to successfully commercialize a new ...

“Vertical gallium nitride is still a relatively immature platform for device development,” says Binder, who points to a very mature, established commercialisation path for SiC MOSFETs. “If we can ...

Consequently, to develop highly reliable GaN MOSFETs, it is crucial to quash the density of ... Pictured above: (a) Schematic energy band diagram of holes trapped in SiO 2 /GaN MOS structure. (b) ...

Engineers are moving from silicon-based solutions to wide-band gap ones Credit: IQE Electronics designers are now moving away from conventional Si-based power electronics and towards wide-bandgap ...