Cambridge GaN Devices’s hybrid architecture for power modules combines gallium-nitride and IGBT devices to give EV designers an efficient, affordable solution for drivetrains and accessories. CGD's ...
Control of the Senate could turn on Montana. Good evening! Tonight, my colleague Mike Baker, who covers the West, has a dispatch from the state that might have the country’s most important Senate race ...
Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...
Abstract: The study proposes the primary design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3kV 2.4kA. Due ...